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| EPA240B-100P UPDATED 02/15/2005 High Efficiency Heterojunction Power FET * * * * * * NON-HERMETIC 100MIL METAL FLANGE PACKAGE +32.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY G D ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth * PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 12GHz Vds=8V, Ids=50% Idss f= 18GHz Gain at 1dB Compression f= 12GHz Vds=8V, Ids=50% Idss f= 18GHz Power Added Efficiency at 1dB Compression Vds=8 V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=6mA Igd=2.4mA Igs=2.4mA -11 -7 MIN 31.0 9.0 TYP 32.5 32.5 10.5 7.5 44 440 480 720 760 -1.0 -15 -14 23* -2.5 940 MAX UNIT dBm dB % mA mS V V V C/W Thermal Resistance (Au-Sn Eutectic Attach) Overall Rth depends on case mounting. CONTINUOUS1,2 8V -3V 710mA 20mA @ 3dB Compression 150 oC -65 to +150 oC 5.7W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25C SYMBOLS PARAMETERS Drain-Source Voltage Vds Gate-Source Voltage Vgs Drain Current Ids Forward Gate Current Igsf Input Power Pin Channel Temperature Tch Storage Temperature Tstg Total Power Dissipation Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised February 2005 |
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